By Peter W. Hawkes
Advances in Imaging and Electron Physics merges long-running serials-Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This sequence beneficial properties prolonged articles at the physics of electron units (especially semiconductor devices), particle optics at low and high energies, microlithography, photograph technological know-how and electronic picture processing, electromagnetic wave propagation, electron microscopy, and the computing equipment utilized in a majority of these domain names.
An very important characteristic of those Advances is that the topics are written in the sort of approach that they are often understood by means of readers from different specialities.
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Additional resources for Advances in Imaging and Electron Physics, Vol. 151
Hounsfield units correspond to a shift and scaling of the absorption coefficients, such that HU(μ) = 1000 μ − μ H2 O . μ H2 O (93) Here, μH2 O corresponds to the absorption coefficient of water. 0183/mm. Notice that the shift used in the transition from μ-values to HU must be taken into account when adding images. Figure 32 shows some reconstruction results. The specification of the level and window (L/W) 40 HU/200 HU means that the available gray-level range is assigned to object points between −60 HU and 140 HU.
With this a projection-driven reconstruction can be phrased as follows: 1. Transform each projection into one or more filtered projections. 2. During the backprojection use the filtered values associated with the points onto which the object point is projected from each source position. Step 1 indicates that we perform the filtering along each of the filter lines, by which we obtain filtered values along the filter lines. For the backprojection in step 2, we might need to take different sets of filter lines into account and sum these using the correct weights.
Comparing with Eqs. (23) and (24), we realize that 0 < s¯ < 2π. Using s¯ in Eq. (28) and making use of the symmetry of the tan function, we obtain uP s¯ = arccot . 2 R (30) From Eq. (29) we determine vP = h¯ 1 + uP R 2 s¯ − (n + 1)π, lower boundary, s¯ + (n − 1)π, upper boundary (31) where we inserted Eq. (30) into the denominator of Eq. (29) and used Eq. (21). Now, using Eq. (30) again and making use of arccot uP /R = π/2 − arctan uP /R, we derive up,low ,n (uP vP ) = ±h¯ 1 + uP R 2 n uP π ∓ arctan 2 R .